Analysis of Circularly Polarized Light Irradiation Effects on Double Ferromagnetic-Gate Silicene Junction

Main Article Content

Peerasak Chantngarm Kou Yamada

Abstract

We present an analytical study of effects that off-resonant circularly polarized light irradiation has on spin-valley currents in dual ferromagnetic-gate silicene-based junctions. Two identical electric fields are applied to both ferromagnetic (FM) gates. Two types of exchange field configurations, parallel (P) and anti-parallel (AP), are applied along with chemical potential to the FM gates in this investigation. The results show that application of circularly polarized light has an impact on polarized spin and valley current characteristics, particularly at the off-resonant frequency region. It also enhances the amplitude of tunnelling magnetoresistance (TMR) significantly. In addition, we found that exchange field configuration has an effect on both spin polarization and valley polarization. Our study reveals that light intensity plays the main role on the light irradiation effects, where the band structure and change electronic properties of the materials are modified by photon dressing to create a new phase of electronic structure. The change of band structure in each region affects the transmission coefficients and transmission probability amplitude of electrons, which in turn affects the conductance of each spin-valley current component. Our study suggests the potential of this scheme in applications, such as spin-valleytronic photo-sensing devices under polarized-photo irradiation.

Keywords

Article Details

How to Cite
[1]
P. Chantngarm and K. Yamada, “Analysis of Circularly Polarized Light Irradiation Effects on Double Ferromagnetic-Gate Silicene Junction”, ECTI Transactions on Computer and Information Technology (ECTI-CIT), vol. 12, no. 1, pp. 17-25, Apr. 2018.
Section
RESEARCH ARTICLE
Author Biographies

Peerasak Chantngarm, Department of Electronics and Telecommunication Engineering, Faculty of Engineering, Rajamangala University of Technology Krungthep, Bangkok, Thailand

Associate Professor

Department of Electronics and Telecommunication Engineering

Kou Yamada, Domain of Mechanical Science and Technology, Graduate School of Science and Technology, Gunma University, Gunma, Japan

Professor

Domain of Mechanical Science and Technology

References

[1] P. Vogt et al., “Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon,” Physical Review Letters, Vol. 108, pp. 155501, 2012.

[2] M. Ezawa, “Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene,” Physical Review Letters, Vol. 109, pp. 055502, 2012.

[3] T. Yokoyama, “Spin and Valley Transports in Junctions of Dirac Fermions,” New Journal of Physics, Vol. 16, pp. 085005, 2014.

[4] T. Yokoyama, “Controllable Valley and Spin Transport in Ferromagnetic Silicene Junctions,” Physical Review B, Vol. 87, pp. 241409(R), 2013.

[5] V. Vargiamidis and P. Vasilopoulos, "Electric- and Exchange-Field Controlled Transport through Silicene Barriers: Conductance Gap and Near-Perfect Spin Polarization," Applied Physics Letters, Vol. 105, pp. 223105, 2014.

[6] B. Soodchomshom, "Perfect Spin-Valley Filter Controlled by Electric Field in Ferromagnetic Silicene," Journal of Applied Physics, Vol. 115, pp. 023706, 2014.

[7] X.Q. Wu and H. Meng, "Gate-Tunable Valley-Spin Filtering in Silicene with Magnetic Barrier," Journal of Applied Physics, Vol. 117, pp. 203903, 2015.

[8] W. F. Tsai, et al., "Gated Silicene as a Tunable Source of Nearly 100% Spin-Polarized Electrons," Nature Communications, Vol. 4, pp. 1500, 2013.

[9] Y. Wang and Y. Lou, "Controllable Spin Transport in Dual-Gated Silicene," Physics Letters A, Vol. 378, pp. 2627, 2014.

[10] P. Chantngarm, K. Yamada, and B. Soodchomshom, “Lattice-Pseudospin and Spin-Valley Polarizations in Dual Ferromagnetic-Gated Silicene Junction,” Superlattices and Microstructures, Vol. 94, pp. 13-24, 2016.

[11] L. Tao, et al., “Silicene Field-Effect Transistors Operating at Room Temperature,” Nature Nanotechnology, Vol. 10, pp. 227-231, 2015.

[12] T. Kitagawa et al., “Transport Properties of Nonequilibrium Systems under the Application of Light: Photoinduced Quantum Hall Insulators without Landau Levels,” Physical Review B: Condensed Matter and Materials Physics, Vol. 84, pp. 235108, 2011.

[13] M. Ezawa, “Photoinduced Topological Phase Transition and a Single Dirac-Cone State in Silicene,” Physical Review Letters, Vol. 110, pp. 026603, 2013.

[14] Y. Mohammadi and B. A. Nia, “Controllable Photo-Induced Spin and Valley Filtering in Silicene,” Superlattices and Microstructures, Vol. 96, pp. 259-266, 2016.

[15] L. B. Ho and T. N. Lan, “Photoenhanced Spin/Valley Polarization and Tunneling Magnetoresistance in
Ferromagnetic-Normal-Ferromagnetic Silicene Junction,” Journal of Physics D: Applied Physics, Vol. 49, pp. 375106, 2016.

[16] P. Chantngarm, K. Yamada, and B. Soodchomshom, “Polarized-Photon Frequency Filter in Double-Ferromagnetic Barrier Silicene Junction,” The Journal of Magnetism and Magnetic Materials, Vol. 429, pp. 16–22, 2017.

[17] H. Haugen, D. Huertas-Hernando, and A. Brataas, “Spin Transport in Proximity-Induced Ferromagnetic Graphene,” Physical Review B: Condensed Matter and Materials Physics, Vol. 77, pp. 115406, 2008.

[18] W. Happer and B. S. Mathur, “Off-Resonant Light as a Probe of Optically Pumped Alkali Vapors,” Physical Review Letters, Vol. 18, pp. 577-580, 1967.

[19] M. Auzinsh, D. Budker, S. M. Rochester, Optically polarized atoms: Understanding light-atom interactions, Oxford University Press, 2010.

[20] M. Ezawa, “Topological Phase Transition and Electrically Tunable Diamagnetism in Silicene,” The European Physical Journal B, Vol. 85, pp. 363, 2012.

[21] M. Ezawa, “Spin Valleytronics in Silicene: Quantum Spin Hall–Quantum Anomalous Hall Insulators and Single-Valley Semimetals,” Physical Review B: Condensed Matter and Materials Physics, Vol. 87, pp. 155415, 2013.

[22] C. C. Liu, W. Feng, and Y. Yao, “Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium,” Physical Review Letters, Vol. 107, pp. 076802, 2011.

[23] K. S. Novoselov, et al., “Two-Dimensional Gas of Massless Dirac Fermions in Graphene,” Nature, Vol. 438, pp. 197, 2005.

[24] R. Landauer, “Spatial Variation of Currents and Fields Due to Localized Scatterers in Metallic Conduction,” IBM Journal of Research and Development, Vol. 1, pp. 223-231, 1957.

[25] U. D. Giovannini, H. Hubener, and A. Rubio, “Monitoring Electron-Photon Dressing in WSe2,” Nano Letters, Vol. 16, pp. 7993–7998, 2016.

[26] F. H. M. Faisal and J. Z. Kaminski, “Floquet-Bloch Theory of High-Harmonic Generation in Periodic Structures,” Physical Review A, Vol. 56, pp. 748-762, 1997.

[27] J. C. Slater and G. F. Koster, “Simplified LCAO Method for the Periodic Potential Problem,” Physical Review, Vol. 94, pp. 1498-1524, 1954.

[28] W. A. Harrison, Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond, Dover Publications, 1989.

[29] M. Finnis, Interatomic Forces in Condensed Matter, Oxford University Press, 2010.

[30] D. A. Papaconstantopoulos and M. J. Mehl, “The Slater-Koster Tight-Binding Method: A Computationally Efficient and Accurate Approach,” Journal of Physics: Condensed Matter, Vol. 15, pp. R413-R440, 2003.

[31] M. Elstner, et al., “Self-Consistent-Charge Density-Functional Tight-Binding Method for Simulations of Complex Materials Properties,” Physical Review B, Vol. 58, pp. 7260-7268, 1998.

[32] C. C. Liu, H. Jiang, and Y. Yao, “Low-energy Effective Hamiltonian Involving Spin-Orbit Coupling in Silicene and Two-Dimensional Germanium and Tin,” Physical Review B, Vol. 84, pp. 195430, 2011.

[33] L. A. Agapito, et al., “Accurate Tight-Binding Hamiltonians for Two-Dimensional and Layered Materials,” Physical Review B, Vol. 93, pp. 125137, 2016.

[34] R. Cote and M. Barrette, “Validity of the Two-Component Model of Bilayer and Trilayer Graphene in a Magnetic Field,” Physical Review B, Vol. 88, pp. 245445, 2013.