A Low Voltage Class-AB Current Mirror Using Quasi-Floating gate Technique

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หาญพล มิตรวงศ์

Abstract

The proposed Class AB current mirror is designed using a quasi-floating gate technique to allow the circuit to efficiently operate under low power supply. The quasi-floating gate technique allows the bias power supply to each of the MOSFET transistors. While other Class AB current mirror use higher power supply because it is limited by the threshold voltage of the MOSFET transistor. The proposed circuit was simulated using a SPICE (Simulation Program with Integrated Circuit Emphasis) program. The program is used to study the overall efficiency of the circuit utilising 0.13 µm technologies under a 0.5 V power supply. The results show that the circuit has an input impedance of 832 Ohms and has an output impedance of 7.79k Ohms. The circuit has a higher output resistance than the input resistance of 165 times. Moreover, a total harmonic distortion (THD) is less than 1% when the input current is less than ± 38 µA. The circuit also has a transfer function of -0.053 decibels (dB), which is approximately 0.99 times. However, overall, the circuit is able to efficiently operate under low power.

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Article Details

How to Cite
มิตรวงศ์ห. (2019). A Low Voltage Class-AB Current Mirror Using Quasi-Floating gate Technique. Journal of Industrial Technology Ubon Ratchathani Rajabhat University, 9(1), 83-96. Retrieved from https://www.tci-thaijo.org/index.php/jitubru/article/view/183421
Section
Research Article

References

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