Fabrication and Thermoelectric Properties of p-Bi0.4Sb1.6Te3.4 and n-Bi2Te3 for Thermal Sensors

Abstract

We optimized a low signal the thermal sensor of p-Sb₂Te₃ by synthesized p-Bi_0.4Sb_1.6Te_3.4 from Bi, Sb and Te powder using planetary ball mill and hot press methods to obtain bulk samples. The thermoelectric (TE) properties and crystal structure of bulk samples were investigated by ZEM-3 and XRD method. The electrical conductivity, Seebeck coefficient, thermal conductivity and dimensionless figure of merit of p-Bi_0.4Sb_1.6Te_3.4 and n-Bi₂Te₃ samples were increased with increasing temperature range from 300 − 550 K in He atmosphere. The thermal sensor of p-Bi_0.4Sb_1.6Te_3.4 and n-Bi₂Te₃ thermoelectric cell has similarly signal K type thermocouple.